NDS8435 Fairchild Semiconductor, NDS8435 Datasheet - Page 5

• Manufacturer Part Number: NDS8435
• Description: MOSFET P-CH 30V 7A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS8435TR

Typical Electrical Characteristics
V
GS
4 0 0 0
2 0 0 0
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 9. Capacitance Characteristics.
1.1
0.1
1
-50
Figure 11. Switching Test Circuit.
I
R
D
0.2
Figure 7. Breakdown Voltage
-25
f = 1 MHz
V
Variation with Temperature.
GEN
= -250µA
GS
= 0V
-V
T
DS
0
J
0.5
V
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
50
-V
D
2
S
DD
7 5
R
L
5
1 0 0
D U T
(continued)
1 0
1 2 5
V
C iss
C oss
C rss
O U T
1 5 0
3 0
V
Figure 8. Body Diode Forward Voltage Variation
V
t
0.001
OUT
0.01
d(on)
Figure 10. Gate Charge Characteristics.
0.5
0.1
IN
20
10
1 0
5
1
8
6
4
2
0
0.2
1 0 %
0
Figure 12. Switching Waveforms.
V
I
GS
D
= 0V
= -7.0A
-V
0.4
t
SD
o n
5 0 %
1 0
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
t
9 0 %
PULSE W IDTH
r
Q
with Source Current and
0.6
g
, GATE CHARGE (nC)
2 0
25°C
Temperature.
t
0.8
d(off)
V
3 0
-55°C
DS
5 0 %
= -5.0V
1
9 0 %
t
1 0 %
off
4 0
9 0 %
NDS8435 Rev. B2
-10V
1.2
INVERTED
-15V
t
f
5 0