NDS8435 Fairchild Semiconductor, NDS8435 Datasheet - Page 4

• Manufacturer Part Number: NDS8435
• Description: MOSFET P-CH 30V 7A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS8435TR

Typical Electrical Characteristics
-30
-25
-20
-15
-10
-20
-16
-12
-5
-8
-4
0
0
1.6
1.4
1.2
0.8
0.6
-1
0
1
-50
V
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
DS
V
GS
Figure 3. On-Resistance Variation
= -10V
V
I
-0.5
-25
= -10V
D
GS
=-7.0A
-2
= -10V
V
V
GS
DS
0
T , JUNCTION TEMPERATURE (°C)
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
-6.0
J
, DRAIN-SOURCE VOLTAGE (V)
-1
-5.0
-3
25
-4.5
-1.5
T
-4.0
J
50
= -55°C
-4
-3.5
75
-2
-3.0
100
-5
-2.5
125°C
25°C
-2.5
125
-3
-6
150
2.5
1.5
0.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
0.6
3
2
1
2
1
1
-50
0
0
with Drain Current and Gate Voltage.
V
with Drain Current and Temperature.
Figure 6. Gate Threshold Variation
GS
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
V
GS
-25
= -10V
= -3.0V
-5
-5
0
with Temperature.
T , JUNCTION TEMPERATURE (°C)
J
-10
-10
I
I
D
D
25
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-3.5
-15
-15
50
-4.0
T = 125°C
J
75
-20
-20
-4.5
25°C
-5.0
I
100
V
D
DS
-55°C
-6.0
= -250µA
= V
-25
-25
-10
GS
125
NDS8435 Rev. B2
-30
150
-30