IRF540S Vishay, IRF540S Datasheet - Page 3

• Manufacturer Part Number: IRF540S
• Description: MOSFET N-CH 100V 28A D2PAK
• Manufacturer: Vishay

Specifications of IRF540S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF540S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91022
S10-1442-Rev. C, 05-Jul-10
91022_02
91022_01
Fig. 2 - Typical Output Characteristics, T
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
2
1
10
2
1
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS ,
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
175 °C
25 °C
1
1
C
4.5 V
C
4.5 V
= 175 °C
= 25 °C
91022_03
91022_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
1
- 60 - 40 - 20 0
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= 17 A
= 10 V
V
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF540S, SiHF540S
20 40 60 80 100 120 140 160180
6
25
°
C
7
175
Vishay Siliconix
20 µs Pulse Width
°
V
C
8
DS
=
50 V
9
www.vishay.com
10
3