IRF540S Vishay, IRF540S Datasheet - Page 5

• Manufacturer Part Number: IRF540S
• Description: MOSFET N-CH 100V 28A D2PAK
• Manufacturer: Vishay

Specifications of IRF540S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF540S

Document Number: 91022
S10-1442-Rev. C, 05-Jul-10
91022_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
30
25
20
15
10
5
0
91022_11
25
10
0.1
10
-2
50
1
10
T
-5
C
D = 0.5
0.2
0.1
0.05
0.02
0.01
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
0.1
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF540S, SiHF540S
DS
t
r
1
j
= P
P
DM
D.U.T.
DM
x Z
Vishay Siliconix
R
D
t
1
1
thJC
t
d(off)
/t
2
t
+ T
2
t
C
f
10
+
-
www.vishay.com
V
DD
5