IRF540S Vishay, IRF540S Datasheet - Page 4

• Manufacturer Part Number: IRF540S
• Description: MOSFET N-CH 100V 28A D2PAK
• Manufacturer: Vishay

Specifications of IRF540S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF540S

IRF540S, SiHF540S
Vishay Siliconix
www.vishay.com
4
91022_06
91022_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3000
2400
1800
1200
600
20
16
12
0
8
4
0
10
0
I
0
D
= 17 A
10
V
DS ,
Q
G
Drain-to-Source Voltage (V)
20
, Total Gate Charge (nC)
V
DS
30
V
C
C
C
= 20 V
GS
iss
rss
oss
= C
= 0 V, f = 1 MHz
= C
= C
V
40
10
DS
gs
gd
ds
1
+ C
= 50 V
C
+ C
C
rss
C
oss
V
gd
iss
50
gd
For test circuit
see figure 13
DS
, C
= 80 V
ds
Shorted
60
70
91022_07
91022_08
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
-1
1
2
3
5
2
5
2
5
2
1
0
0.1
0.4
Fig. 8 - Maximum Safe Operating Area
2
5
V
V
DS
SD
1
Operation in this area limited
T
T
Single Pulse
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
C
J
2
= 175 °C
= 25 °C
150
0.8
5
°
10
C
by R
2
25
DS(on)
5
°
C
10
10
10
100
1
2
S10-1442-Rev. C, 05-Jul-10
1.2
ms
2
Document Number: 91022
µs
ms
µs
5
10
V
3
GS
2
= 0 V
5
10
1.6
4