IRF630S Vishay, IRF630S Datasheet - Page 2

• Manufacturer Part Number: IRF630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF630S, SiHF630S
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
.
DS
SD
DD
Temperature Coefficient
 9.0 A, dI/dt  120 A/μs, V
= 50 V, starting T
c
J
= 25 °C, L = 4.6 mH, R
J
= 25 °C, unless otherwise noted)
DD
 V
DS
, T
J
 150 °C.
This document is subject to change without notice.
SYMBOL
SYMBOL
g
V
R
V
= 25 , I
R
R
R
t
t
C
I
I
C
V
DS(on)
C
Q
Q
C
GS(th)
d(on)
d(off)
GSS
DSS
Q
DS
g
L
L
thJC
thJA
thJA
t
DS
oss
t
rss
iss
gd
fs
gs
r
D
f
S
g
= 25 °C, unless otherwise noted)
/T
J
AS
= 9.0 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
for 10 s
V
V
GS
GS
V
DS
Reference to 25 °C, I
MIN.
= 10 V
= 10 V
= 160V, V
-
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
R
V
DS
DS
DD
DS
GS
g
= 200 V, V
= 12 , R
= V
= 50 V, I
= 100 V, I
V
= 0, I
V
see fig. 10
GS
V
DS
GS
GS
GS
I
D
= ± 20 V
, I
= 25 V,
= 5.9 A, V
D
= 0 V,
see fig. 6 and 13
= 0 V, T
D
= 250 μA
D
= 250 μA
SYMBOL
D
D
I
GS
= 5.4 A
D
= 16 
T
= 5.9 A
b
TYP.
J
= 5.4 A
D
, T
= 0 V
-
-
-
= 1 mA
J
stg
G
= 125 °C
DS
b
= 160 V
b
D
S
b
- 55 to + 150
MIN.
200
MAX.
2.0
3.8
LIMIT
1.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
62
300
S11-1047-Rev. C, 30-May-11
www.vishay.com/doc?91000
d
Document Number: 91032
TYP.
0.24
800
240
9.4
4.5
7.5
76
28
39
20
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.40
250
4.0
7.0
25
43
23
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
°C
UNIT
V/°C
nC
nH
nA
μA
pF
ns

S
V
V