IRF630S Vishay, IRF630S Datasheet - Page 6

• Manufacturer Part Number: IRF630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF630S, SiHF630S
Vishay Siliconix
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
91032_11
to obtain
AS
R
10
g
10 V
0.1
10
-2
1
10
V
-5
DS
0 − 0.5
0.2
0.1
0.05
0.02
0.01
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
10
0.01 Ω
L
-4
91032_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Single Pulse
(Thermal Response)
500
400
300
200
100
600
This document is subject to change without notice.
0
25
V
DD
10
Starting T
= 50 V
t
+
-3
1
-
, Rectangular Pulse Duration (s)
V
50
DD
J
, Junction Temperature (°C)
75
10
-2
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
0.1
DS
4.0 A
5.7 A
9.0 A
I
D
150
Notes:
1. Duty Factor, D = t
2. Peak T
t
1
p
j
= P
P
DM
DM
S11-1047-Rev. C, 30-May-11
www.vishay.com/doc?91000
x Z
Document Number: 91032
t
1
1
thJC
/t
V
2
DS
t
+ T
2
C
10
V
DD