IRF630S Vishay, IRF630S Datasheet - Page 3

• Manufacturer Part Number: IRF630S
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Vishay

Specifications of IRF630S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91032
S11-1047-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91032_01
Fig. 1 - Typical Output Characteristics, T
10
10
10
-1
1
0
10
-1
Top
Bottom
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
, Drain-to-Source Voltage (V)
GS
10
J
= 25 °C, unless otherwise noted)
0
a
20 µs Pulse Width
T
C
=
10
25 °C
1
This document is subject to change without notice.
SYMBOL
V
I
Q
t
SM
t
I
on
SD
S
rr
rr
4.5 V
C
= 25 °C
MOSFET symbol
showing the
integral reverse
p - n junction diode
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
J
= 25 °C, I
TEST CONDITIONS
T
J
dI/dt = 100 A/μs
= 25 °C, I
91032_02
S
= 9.0 A, V
Fig. 2 - Typical Output Characteristics, T
10
10
F
10
= 5.9 A,
-1
1
0
10
-1
Top
Bottom
GS
b
G
= 0 V
V
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
b
D
S
GS
IRF630S, SiHF630S
Drain-to-Source Voltage (V)
10
0
MIN.
-
-
-
-
-
www.vishay.com/doc?91000
Vishay Siliconix
TYP.
170
20 µs Pulse Width
T
1.1
C
-
-
-
=
10
150 °C
1
www.vishay.com
MAX.
340
9.0
2.0
2.2
36
S
C
4.5 V
and L
= 150 °C
D
UNIT
)
μC
ns
A
V
3