IRF840AS Vishay, IRF840AS Datasheet - Page 4

• Manufacturer Part Number: IRF840AS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840AS

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20
16
12
8
4
0
0
I =
D
7.4 A
8.0
Q , Total Gate Charge (nC)
G
10
V
V
V
DS
DS
DS
= 400V
= 250V
= 100V
20
FOR TEST CIRCUIT
SEE FIGURE
30
13
40
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
0.2
10
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
= 25 C
= 150 C
V
OPERATION IN THIS AREA LIMITED
V
T = 150 C
SD
J
DS
°
°
0.5
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
100
°
BY R
0.8
T = 25 C
DS(on)
J
10us
100us
1ms
10ms
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
1000
°
1.1
V
GS
= 0 V
1.4
10000