IRF840AS Vishay, IRF840AS Datasheet - Page 6

• Manufacturer Part Number: IRF840AS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840AS

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1200
1000
800
600
400
200
0
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
25
I
AS
R
Starting T , Junction Temperature ( C)
20 V
G
V
DS
50
t
p
J
I
AS
D.U.T.
0.01 Ω
L
t
75
p
100
V
DS
TOP
BOTTOM
15 V
Driver
125
+
- V
A
DD
°
I D
3.6A
5.1A
8.0A
150
10 V
Fig. 12d - Typical Drain-to-Source Voltage vs.
Fig. 13a - Basic Gate Charge Waveform
V
12 V
G
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
GS
0.2 µF
Avalanche Current
Current sampling resistors
3 mA
50 kΩ
Charge
Q
Q
0.3 µF
GD
G
I
G
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
D.U.T.
I
D
+
-
V
DS