IRF9Z24STRR Vishay, IRF9Z24STRR Datasheet
IRF9Z24STRR
Specifications of IRF9Z24STRR
Related parts for IRF9Z24STRR
IRF9Z24STRR Summary of contents
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... ° 100 ° ° °C C for Ω (see fig. 12 ≤ 175 ° Vishay Siliconix 2 PAK is suitable PAK (TO-263) I PAK (TO-262) a IRF9Z24STRRPbF IRF9Z24LPbF a SiHF9Z24STR-E3 SiHF9Z24L-E3 a IRF9Z24STRR IRF9Z24L a SiHF9Z24STR SiHF9Z24L SYMBOL LIMIT ± 7 0.40 E 240 6 dV/ 175 J stg ...
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... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... V Bottom - 4 µs Pulse Width Drain-to-Source Voltage ( 91091_02 Fig Typical Output Characteristics Document Number: 91091 S09-0073-Rev. A, 02-Feb-09 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L - 4 ° 91091_03 - 4 175 ° 91091_04 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 2.5 2 ...
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... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix 1250 MHz iss rss gd 1000 oss ds 750 500 250 Drain-to-Source Voltage ( 91091_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91091_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91091_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91091 S09-0073-Rev. A, 02-Feb-09 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 125 100 Starting T , Junction Temperature (°C) 91091_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 4 7 150 175 Current regulator Same type as D.U.T. ...
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... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91091. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...