IRL640S Vishay, IRL640S Datasheet - Page 6
![MOSFET N-CH 200V 17A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRL640S
Manufacturer Part Number
IRL640S
Description
MOSFET N-CH 200V 17A D2PAK
Manufacturer
Vishay
Datasheet
1.IRL640S.pdf
(8 pages)
Specifications of IRL640S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL640S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL640STRLPBF
Manufacturer:
VISHAY
Quantity:
5 737
IRL640S, SiHL640S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
5 V
p
Fig. 13a - Basic Gate Charge Waveform
V
to obtain
G
AS
R
Q
5 V
g
GS
V
DS
Charge
t
p
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2554-Rev. B, 08-Nov-10
Document Number: 91306
D.U.T.
V
I
DS
D
V
+
-
DD
V
DS