IRL640S Vishay, IRL640S Datasheet - Page 7
![MOSFET N-CH 200V 17A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRL640S
Manufacturer Part Number
IRL640S
Description
MOSFET N-CH 200V 17A D2PAK
Manufacturer
Vishay
Datasheet
1.IRL640S.pdf
(8 pages)
Specifications of IRL640S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL640S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL640STRLPBF
Manufacturer:
VISHAY
Quantity:
5 737
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91306.
Document Number: 91306
S10-2554-Rev. B, 08-Nov-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
IRL640S, SiHL640S
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7