FDS3612 Fairchild Semiconductor, FDS3612 Datasheet - Page 3

• Manufacturer Part Number: FDS3612
• Description: MOSFET N-CH 100V 3.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 632pF @ 50V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
20
16
12
20
16
12
8
4
0
8
4
0
Figure 3. On-Resistance Variation with
2
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0
Figure 1. On-Region Characteristics.
2
1
V
-50
DS
Figure 5. Transfer Characteristics.
= 10V
V
V
I
D
GS
GS
-25
2.5
= 3.4A
= 10V
= 10V
V
GS
2
V
0
, GATE TO SOURCE VOLTAGE (V)
T
DS
J
, JUNCTION TEMPERATURE (
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
3
T
25
5.0V
A
= 125
50
o
C
3.5
4
4.5V
75
-55
4.0V
o
C
4
3.5V
100
25
o
C
o
C)
6
125
4.5
150
175
5
8
Figure 6. Body Diode Forward Voltage Variation
0.4
0.3
0.2
0.1
0.0001
0
0.001
0.01
1.8
1.6
1.4
1.2
0.8
3
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
10
1
1
0
0
V
Drain Current and Gate Voltage.
GS
= 0V
4
V
Gate-to-Source Voltage.
0.2
GS
V
= 4.0V
V
SD
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
5
0.4
T
T
A
A
I
D
= 125
= 25
, DRAIN CURRENT (A)
4.5V
6
8
o
o
0.6
C
C
5.0V
T
A
6.0V
= 125
25
o
7
C
0.8
10V
-55
o
12
C
o
C
8
1
16
FDS3612 Rev B1(W)
I
D
1.2
= 1.7 A
9
1.4
20
10