FDS3612 Fairchild Semiconductor, FDS3612 Datasheet - Page 4

• Manufacturer Part Number: FDS3612
• Description: MOSFET N-CH 100V 3.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3612

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 632pF @ 50V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
= 3.4A
0.1
DS(ON)
SINGLE PULSE
R
0.0001
1
JA
V
2
T
GS
A
= 125
LIMIT
= 25
= 10V
o
o
C/W
C
4
V
D = 0.5
1
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
g
0.1
, GATE CHARGE (nC)
6
0.05
0.02
DC
0.001
0.01
10s
SINGLE PULSE
10
8
1s
100ms
Figure 11. Transient Thermal Response Curve.
10ms
V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DS
10
100 s
1ms
= 40V
80V
100
0.01
12
14
60V
1000
16
0.1
t
1
, TIME (sec)
800
700
600
500
400
300
200
100
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
0.01
RSS
20
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
40
t
1
10
, TIME (sec)
C
OSS
P(pk
1
60
C
Duty Cycle, D = t
ISS
T
R
J
R
SINGLE PULSE
)
R
JA
- T
JA
JA
(t) = r(t) + R
T
100
A
A
t
= 125°C/W
= 125°C/W
1
= 25°C
= P * R
t
2
10
80
FDS3612 Rev B1(W)
V
f = 1MHz
GS
JA
1
= 0 V
(t)
JA
/ t
2
100
100
1000