FDS6688 Fairchild Semiconductor, FDS6688 Datasheet
FDS6688
Manufacturer Part Number
FDS6688
Description
MOSFET N-CH 30V 16A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6688.pdf
(5 pages)
Specifications of FDS6688
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 5V
Input Capacitance (ciss) @ Vds
3888pF @ 15V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6688
Manufacturer:
FSC
Quantity:
1 300
Part Number:
FDS6688
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6688
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DC/DC converter
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
N-Channel
FDS6688
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
DS(ON)
MOSFET
in a small package.
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
has
D
FDS6688
D
Device
Parameter
S
been
S
S
S
S
S
designed
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
16 A, 30 V.
Ultra-low gate charge (40 nC typical)
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +175
12mm
Ratings
125
2.5
1.4
1.2
30
16
50
50
25
20
= 6 m @ V
= 7 m @ V
January 2004
4
3
2
1
GS
GS
= 10 V
= 4.5 V
2500 units
FDS6688 Rev D(W)
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6688 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ January 2004 DS(ON 4.5 V DS(ON Ratings Units 2.5 W 1.4 1.2 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6688 Rev D(W) ...
Page 2
... CA b) 105°C/W when 2 2 mounted on a .04 in pad copper Min Typ Max Units mV 100 –6 mV 5 3888 pF 931 pF 401 pF 1 110 2.1 A 0.7 1 125°C/W when mounted on a minimum pad. FDS6688 Rev D(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6688 Rev D( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 125 °C/W JA P(pk ( Duty Cycle 100 1000 FDS6688 Rev D(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...