FDS6688 Fairchild Semiconductor, FDS6688 Datasheet - Page 2

• Manufacturer Part Number: FDS6688
• Description: MOSFET N-CH 30V 16A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6688

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3888pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
G
g
gs
gd
rr
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
CA
2
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
T
D
D
F
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 16 A, d
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 24 V,
= 20 V,
= V
= 4.5 V,
= 5 V,
= 15 V,
= 15 V,
= 0 V,
= 10 V,
= 10 V, I
= 10 V,
= 15 mV,
= 15 V,
= 10 V,
= 5 V
= 0 V,
Test Conditions
GS
b) 105°C/W when
,
mounted on a .04 in
pad of 2 oz copper
iF
/d
I
D
S
t
= 16 A, T
= 2.1 A
= 100 A/µs
I
V
I
I
I
V
I
V
I
V
D
D
D
D
D
I
R
D
f = 1.0 MHz
D
GS
DS
DS
GS
= 250 A
= 250 A
GEN
= 16 A
= 15 A
= 16 A
= 16 A,
= 1 A,
= 5 V
= 0 V
= 0 V
= 0 V,
= 6
J
=125 C
2
(Note 2)
Min
30
50
1
Typ Max Units
3888
931
401
1.8
4.5
5.2
6.2
1.3
0.7
21
–6
84
14
11
69
32
40
11
15
38
53
c) 125°C/W when mounted
on a minimum pad.
110
2.1
1.2
10
100
25
20
51
56
3
6
7
9
FDS6688 Rev D(W)
mV/ C
mV/ C
m
nC
nC
nC
nC
nA
pF
pF
pF
nS
ns
ns
ns
ns
V
V
A
S
A
V
A