FDS6688 Fairchild Semiconductor, FDS6688 Datasheet - Page 4

• Manufacturer Part Number: FDS6688
• Description: MOSFET N-CH 30V 16A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6688

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 3888pF @ 15V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.01
0.001
R
0.01
I
SINGLE PULSE
D
DS(ON)
R
0.1
= 16A
0.0001
1
JA
V
T
GS
A
= 125
LIMIT
= 25
= 10V
D = 0.5
0.2
o
o
C/W
C
0.1
20
0.1
V
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
0.01
g
, GATE CHARGE (nC)
0.001
SINGLE PULSE
40
1
DC
Figure 11. Transient Thermal Response Curve.
10s
V
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1s
100ms
= 5V
10ms
0.01
60
10
1ms
15V
100µs
10V
100
80
0.1
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
1
Figure 10. Single Pulse Maximum
RSS
0.01
5
C
OSS
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
1
C
, TIME (sec)
ISS
1
15
P(pk)
Duty Cycle, D = t
T
R
R
J
- T
JA
JA
(t) = r(t) * R
100
A
t
= 125 °C/W
1
10
= P * R
t
20
2
SINGLE PULSE
R
JA
JA
T
1
V
f = 1MHz
A
= 125°C/W
100
JA
(t)
/ t
GS
= 25°C
25
FDS6688 Rev D(W)
2
= 0 V
1000
1000
30