ZXMNS3BM832TA Diodes Zetex, ZXMNS3BM832TA Datasheet - Page 2

• Manufacturer Part Number: ZXMNS3BM832TA
• Description: MOSFET/SCHOTTKY30V/40V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXMNS3BM832TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 314pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMNS3BM832TR

ABSOLUTE MAXIMUM RATINGS.
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ZXMNS3BM832
PARAMETER
MOSFET
Drain-Source Voltage
Gate-Charge Voltage
Continuous Drain Current@V
Pulsed Drain Current (c)
Source Current (Body Diode) @T
Pulsed Source Current (Body Diode)(c)
Storage Temperature Range
Junction Temperature
Schottky Diode
Continuous Reverse Voltage
Forward Current
Non Repetitive Forward Current t 100 s
Forward Voltage @ 1A
Storage Temperature Range
Junction Temperature
@V
@V
GS
GS
GS
=4.5V; T
=2.5V; T
=4.5V; T
A
t
=25 C (b)(d)
10ms
A
A
A
=70 C (b)(d)
=25 C (a)(d)
=25 C (b)(d)
2
SYMBOL
V
I
V
T
T
I
I
FSM
V
DSS
DM
SM
V
I
I
T
T
stg
I
stg
GS
D
S
F
R
F
j
j
-55 to +150
-55 to +150
VALUE
DRAFT ISSUE B - JUNE 2002
t.b.a
t.b.a
2.72
2.18
2.00
150
500
125
2.7
5.2
30
40
12
1
12
UNIT
mV
°C
°C
°C
°C
V
V
A
A
A
A
A
A
V
A
A
A