ZXMNS3BM832TA Diodes Zetex, ZXMNS3BM832TA Datasheet - Page 4

• Manufacturer Part Number: ZXMNS3BM832TA
• Description: MOSFET/SCHOTTKY30V/40V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXMNS3BM832TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 314pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMNS3BM832TR

ELECTRICAL CHARACTERISTICS (at T
NOTES:
ZXMNS3BM832
PARAMETER
MOSFET
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
amb
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
V
V
I
C
t
DSS
GSS
d(on)
r
d(off)
f
rr
R
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
(BR)R
F
D
g
gs
gd
rr
= 25°C unless otherwise stated).
4
MIN.
0.7
30
40
2% .
TYP.
t.b.a
0.13
0.17
0.85
17.7
13.0
314
240
265
305
355
390
425
495
420
1.1
1.5
5.1
2.1
2.9
0.6
0.8
40
23
60
50
25
12
MAX.
0.18
0.25
0.95
100
270
290
340
400
450
500
600
100
—
1
UNIT CONDITIONS.
DRAFT ISSUE B - JUNE 2002
mV
mV
mV
mV
mV
mV
mV
mV
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
pF
ns
V
V
S
V
V
A
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/ s
I
I
I
I
I
I
I
I
I
V
f=1MHz,V
switched from
I
Measured at I
F
D
V
D
D
R
F
F
F
F
F
F
F
F
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
R
=500mA to I
=50mA*
=100mA*
=250mA*
=500mA*
=750mA*
=1000mA*
=1500mA*
=1000mA,T
=1.5A
=300 A
=250 A, V
GS
=250 A, V
=25°C, I
=25°C, I
=30V
=6.0 , V
=30V, V
=15V,I
=15 V, V
=15V,V
=4.5V, I
=2.5V, I
=0V
=15V, I
= 20V, V
R
S
F
D
=25V
GS
=2.7A,
GS
=1.7A,
D
D
=1.5A
D
GS
GS
DS
GS
R
a
R
=1.5A
=1.3A
=1A
=100°C
=500mA
=50mA
=4.5V,
=4.5V
DS
=0V
=0V
= V
=0V,
=0V
GS