ZXMNS3BM832TA Diodes Zetex, ZXMNS3BM832TA Datasheet - Page 3

• Manufacturer Part Number: ZXMNS3BM832TA
• Description: MOSFET/SCHOTTKY30V/40V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXMNS3BM832TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.9nc @ 4.5V
• Input Capacitance (ciss) @ Vds: 314pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMNS3BM832TR

THERMAL PARAMETERS
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
DRAFT ISSUE B - JUNE 2002
PARAMETER
Schottky
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Transistor
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
3
SYMBOL
R
R
R
R
R
R
JA
JA
JA
JA
JA
JA
SYMBOL
P
P
P
P
P
P
P
D
D
D
D
D
D
D
ZXMNS3BM832
VALUE
VALUE
83.3
73.5
41.7
23.2
1.13
13.6
125
111
1.2
1.5
2.9
1.7
43
12
12
24
1
8
8
3
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
W
W
W
W
W
W
W