FQAF7N90 Fairchild Semiconductor, FQAF7N90 Datasheet

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FQAF7N90

Manufacturer Part Number
FQAF7N90
Description
MOSFET N-CH 900V 5.2A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQAF7N90

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 2.6A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
2280pF @ 25V
Power - Max
107W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQAF7N90
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
FQAF7N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies..
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQAF Series
C
C
= 25°C unless otherwise noted
TO-3PF
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.2A, 900V, R
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
! ! ! !
! ! ! !
DS(on)
Typ
--
--
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
FQAF7N90
-55 to +150
= 1.55
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
20.8
10.7
0.85
830
107
300
900
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
5.2
3.3
5.2
4.0
30
@V
Max
1.17
40
QFET
GS
= 10 V
March 2001
Units
W/°C
Units
Rev. A, March 2001
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQAF7N90 Summary of contents

Page 1

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQAF7N90 Units 900 5.2 3.3 20.8 30 830 mJ 5.2 10.7 mJ 4.0 V/ns 107 0.85 W/°C -55 to +150 300 Typ ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 58mH 5.2A 50V ≤ 7.4A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 900 ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3500 3000 C 2500 iss 2000 C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... Notes : - 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ HiSeC™ ...

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