FQAF7N90 Fairchild Semiconductor, FQAF7N90 Datasheet - Page 4

• Manufacturer Part Number: FQAF7N90
• Description: MOSFET N-CH 900V 5.2A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF7N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.55 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2280pF @ 25V
• Power - Max: 107W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
T
10
V
vs Temperature
J
1
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
-1
-2
C
J
0
1 0
= 150
= 25
-5
o
C
D = 0 .5
0 . 0 2
o
0 . 0 5
0 . 0 1
C
50
0 . 2
0 . 1
DS(on)
DC
10
Figure 11. Transient Thermal Response Curve
2
10 ms
100
1 0
(Continued)
1 ms
o
C]
-4
s in g le p u ls e
100 s
※ Notes :
1. V
2. I
t
D
G S
1
= 250 μ A
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
= 0 V
150
10 s
10
3
1 0
-3
200
1 0
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-1
P
θ J C
J M
DM
-50
- T
50
(t) = 1 .1 7 ℃ /W M a x .
C
vs Case Temperature
= P
T
t
vs Temperature
D M
J
T
1
, Junction Temperature [
C
t
1 0
0
2
, Case Temperature [ ℃ ]
* Z
0
1
θ J C
/t
75
2
(t)
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= 3.7 A
= 10 V
Rev. A, March 2001
200
150