FQAF7N90 Fairchild Semiconductor, FQAF7N90 Datasheet - Page 3

• Manufacturer Part Number: FQAF7N90
• Description: MOSFET N-CH 900V 5.2A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF7N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.55 Ohm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2280pF @ 25V
• Power - Max: 107W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
10
10
3.0
2.5
2.0
1.5
1.0
0
-1
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
10
V
GS
C
C
C
= 20V
iss
rss
oss
V
GS
= 10V
15
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
20
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
ds
= 25℃
= shorted)
= 0 V
25
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
150℃
10
25
150
o
C
4
o
V
V
C
and Temperature
Q
GS
SD
0.6
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25℃
DS
20
V
= 720V
DS
V
DS
= 450V
= 180V
0.8
6
-55
30
o
C
1.0
※ Notes :
※ Notes :
1. V
2. 250 μ s Pulse Test
1. V
2. 250 μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
40
1.2
D
= 7.4 A
Rev. A, March 2001
1.4
10
50