BUK9508-55A,127 NXP Semiconductors, BUK9508-55A,127 Datasheet - Page 11

MOSFET N-CH 55V 75A SOT78

BUK9508-55A,127

Manufacturer Part Number
BUK9508-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9508-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 5V
Input Capacitance (ciss) @ Vds
6021pF @ 25V
Power - Max
253W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
125 A
Power Dissipation
253 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
167 ns
Minimum Operating Temperature
- 55 C
Rise Time
175 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055644127
BUK9508-55A
BUK9508-55A
Philips Semiconductors
10. Soldering
9397 750 09573
Product data
Fig 18. Reflow soldering footprint for SOT404.
handbook, full pagewidth
Dimensions in mm.
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 03 — 6 May 2002
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
MSD057
BUK95/9608-55A
0.20
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.40
8.275
8.075
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