BUK9508-55A,127 NXP Semiconductors, BUK9508-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9508-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9508-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 167 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 175 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055644127; BUK9508-55A; BUK9508-55A

Philips Semiconductors
Table 5:
T
9397 750 09573
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified.
R DSon
I D
T
T
(A)
(m )
400
300
200
100
j
j
= 25 C; t
= 25 C
20
15
10
0
function of drain-source voltage; typical values.
of drain current; typical values.
5
0
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
V GS = 3 V
10
p
= 300 s
2
100
8
3.2 V
6
3.4 V
4
…continued
4.8
200
3.6 V
5
4 V
6
2.6
label is V GS (V)
4.2
3.8
3.6
3.4
3.2
2.8
2.4
2.2
4.6
4.4
3.8 V
4
3
300
10 V
8
5 V
Conditions
I
Figure 15
I
V
V DS (V)
S
S
I D (A)
GS
= 25 A; V
= 75 A; dI
03ni47
03ni48
= 10 V; V
10
400
Rev. 03 — 6 May 2002
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 25 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
(m )
T
a = R
a
j
1.5
0.5
= 25 C; I
9
8
7
6
5
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
0
DSon
/R
D
DSon(25 C)
Min
-
-
-
= 25 A
0
BUK95/9608-55A
5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.85
70
170
60
10
120
V GS (V)
Max
1.2
-
-
T j ( C)
03ne89
03ni46
180
15
Unit
V
ns
nC
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