BUK9518-55,127 NXP Semiconductors, BUK9518-55,127 Datasheet

MOSFET N-CH 55V 57A SOT78

BUK9518-55,127

Manufacturer Part Number
BUK9518-55,127
Description
MOSFET N-CH 55V 57A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9518-55,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 5V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934045210127
BUK9518-55
BUK9518-55
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
envelope
gate
drain
source
drain
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
using
transistor
’trench’
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 5 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
125
175
55
57
18
MAX.
MAX.
MAX.
228
125
175
1.2
55
55
10
57
40
2
BUK9518-55
-
d
s
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK9518-55,127 Summary of contents

Page 1

... Junction temperature j R Drain-source on-state DS(ON) resistance V PIN CONFIGURATION tab CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK9518-55 MAX 125 175 SYMBOL MIN. MAX. UNIT - 228 - 125 - 55 175 MIN. MAX. UNIT - 2 TYP ...

Page 2

... Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9518-55 MIN. TYP. MAX. UNIT 1.0 1.5 2 ...

Page 3

... RDS(ON) = VDS/ID 120 140 160 180 = f & 0.1 0.01 0.001 120 140 160 180 Product specification BUK9518-55 MIN. TYP. MAX ˚C mb 1000 100 100 1 10 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter Zth j-mb / (K/ 0.5 0.2 0.1 0.05 0.02 ...

Page 4

... Fig.8. Typical transconductance 2.5 4 4.2 4.4 4.6 1 ˚C . Fig.9. Normalised drain-source on-state resistance 2.5 2 1 -100 Product specification BUK9518- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚ VGS(TO max. typ. min. ...

Page 5

... Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK9518-55 Tj/C = 175 25 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. ); conditions parameter T SDS GS WDSS 100 120 140 Tmb / f(T ); conditions DSS VDS T ...

Page 6

... Philips Semiconductors TrenchMOS transistor Logic level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK9518-55 Rev 1.000 ...

Page 7

... Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9518-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK9518-55 Rev 1.000 ...

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