BUK9518-55A NXP Semiconductors, BUK9518-55A Datasheet

MOSFET Power RAIL MOSFET

BUK9518-55A

Manufacturer Part Number
BUK9518-55A
Description
MOSFET Power RAIL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9518-55A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
61 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK9518-55A,127

Available stocks

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Price
Part Number:
BUK9518-55A
Manufacturer:
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Manufacturer:
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Quantity:
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Part Number:
BUK9518-55A
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK9518-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 17 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power
dissipation
drain-source on-state
resistance
V
Conditions
T
see
T
V
V
T
V
see
j
mb
j
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
Figure
= 25 °C; see
Figure
= 5 V; T
= 10 V; I
= 4.5 V; I
= 5 V; I
1; see
11; see
D
j
mb
D
≤ 175 °C
D
= 25 A; T
= 25 A; T
= 25 °C;
= 25 A;
Figure 2
Figure 3
Figure 12
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
j
= 25 °C;
j
= 25 °C
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
12
-
14
Max Unit
55
61
136
16
19
18
V
A
W
mΩ
mΩ
mΩ

Related parts for BUK9518-55A

BUK9518-55A Summary of contents

Page 1

... BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... °C; see j Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Min Typ ≤ sup = ...

Page 3

... sup j(init) 03nf37 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Min - - - see Figure see Figure ≤ 10 µ Figure 2 - -55 - ° Ω ° ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9518-55A Product data sheet DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET 03ne48 μs 100 μ 100 (V) DS © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9518-55A Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Min Typ - - - 60 03ne49 t p δ ...

Page 6

... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1 2.3 0 500 - 0.05 ...

Page 7

... V (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage; typical values C iss C oss ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03ne46 5 4 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET 2.5 V GS(th) (V) 2 max 1.5 typ min 1 ...

Page 9

... (nC) G Fig 14. Reverse diode current as a function of reverse All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET = 175 ° ° 0.2 0.4 0.6 0.8 diode voltage; typical values © NXP B.V. 2011. All rights reserved. ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9518-55A separated from data sheet BUK9518_9618_55A v.1. BUK9518_9618_55A v.1 20010827 BUK9518-55A Product data sheet ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK9518-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 February 2011 Document identifier: BUK9518-55A ...

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