BUK9520-55,127 NXP Semiconductors, BUK9520-55,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9520-55,127
• Description: MOSFET N-CH 55V 52A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 116W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934050400127; BUK9520-55; BUK9520-55

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
ID/A
100
Fig.5. Typical output characteristics, T
ID/A
I
80
60
40
20
D
Fig.6. Typical on-state resistance, T
24
23
22
21
20
19
18
17
16
15
14
13
0
100
0
= f(V
80
60
40
20
4.4
0
0
10
RDS(ON)/mOhm
0
5
Fig.7. Typical transfer characteristics.
Tj/C =
10
GS
) ; conditions: V
R
2
I
DS(ON)
1
D
20
VGS/V =
= f(V
175
30
= f(I
transistor
DS
2
4
); parameter V
D
40
); parameter V
VDS/V
ID/A
25
DS
3
50
VGS/V
= 25 V; parameter T
6
60
4
GS
70
GS
8
4
j
VGS/V =
j
= 25 ˚C .
4.2
= 25 ˚C .
5
80
4.4
4.6
4.8
5
10
90
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
6
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
2.5
1.5
0.5
Fig.8. Typical transconductance, T
50
40
30
20
10
2.5
1.5
0.5
0
2
1
0
-100
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
= f(T
Tj / C
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
= 1 mA; V
D
60
100
= 25 A; V
100
DS
Product specification
= 25 V
BUK9520-55
150
BUK959-60
j
150
80
= 25 ˚C .
DS
GS
= V
Rev 1.100
= 5 V
200
200
GS
100