SI4420DY,518 NXP Semiconductors, SI4420DY,518 Datasheet - Page 12

MOSFET N-CH 30V 12.5A SOT96-1

SI4420DY,518

Manufacturer Part Number
SI4420DY,518
Description
MOSFET N-CH 30V 12.5A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of SI4420DY,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056381518
SI4420DY /T3
SI4420DY /T3
Philips Semiconductors
Contents
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2
3
4
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7.1
8
9
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© Philips Electronics N.V. 2001.
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 May 2001
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Transient thermal impedance . . . . . . . . . . . . . . 4
Document order number: 9397 750 08239
Printed in The Netherlands
N-channel enhancement mode field-effect transistor
Si4420DY

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