SI4420DY,518 NXP Semiconductors, SI4420DY,518 Datasheet - Page 8

• Manufacturer Part Number: SI4420DY,518
• Description: MOSFET N-CH 30V 12.5A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4420DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056381518; SI4420DY /T3; SI4420DY /T3

9. Package outline
Fig 15. SOT96-1 (SO8).
Philips Semiconductors
9397 750 08239
Product data
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
inches
UNIT
mm
OUTLINE
VERSION
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
y
A
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
0.20
0.19
p
D
5.0
4.8
5
4
0
(1)
Rev. 01 — 28 May 2001
w
0.16
0.15
E
4.0
3.8
(2)
M
scale
0.050
EIAJ
1.27
2.5
c
e
N-channel enhancement mode field-effect transistor
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
0.039
0.016
E
E
1.0
0.4
detail X
L
p
0.028
0.024
L
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
© Philips Electronics N.V. 2001. All rights reserved.
0.25
0.01
A
w
v
X
M
Si4420DY
0.004
0.1
A
y
ISSUE DATE
97-05-22
99-12-27
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
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