BUK9528-55A,127 NXP Semiconductors, BUK9528-55A,127 Datasheet - Page 3

MOSFET N-CH 55V 42A TO220AB

BUK9528-55A,127

Manufacturer Part Number
BUK9528-55A,127
Description
MOSFET N-CH 55V 42A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9528-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1725pF @ 25V
Power - Max
99W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
42 A
Power Dissipation
99 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934056256127
BUK9528-55A
BUK9528-55A
Philips Semiconductors
9397 750 07683
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der (%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
single pulse.
100%
50
10 3
10 2
I D
75
10
(A)
1
1
100
P
t p
125
T
150
T mb ( o C)
R DSon = V DS / I D
=
t p
T
175
t
03na19
200
Rev. 01 — 18 January 2001
BUK9528-55A; BUK9628-55A
Fig 2. Normalized continuous drain current as a
10
D.C.
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
D 25 C
120
100
80
60
40
20
I
0
D
0
25
100%
50
TrenchMOS™ logic level FET
V DS (V)
75
t p = 10 us
100 us
1 ms
10 ms
100 ms
03nc03
100
© Philips Electronics N.V. 2001. All rights reserved.
10 2
125
150
T mb ( o C)
175
03aa24
200
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