BUK9528-55A,127 NXP Semiconductors, BUK9528-55A,127 Datasheet - Page 8
![MOSFET N-CH 55V 42A TO220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9528-55A,127
Manufacturer Part Number
BUK9528-55A,127
Description
MOSFET N-CH 55V 42A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9628-55A118.pdf
(15 pages)
Specifications of BUK9528-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1725pF @ 25V
Power - Max
99W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
42 A
Power Dissipation
99 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934056256127
BUK9528-55A
BUK9528-55A
BUK9528-55A
BUK9528-55A
Philips Semiconductors
9397 750 07683
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
100
I D
(A)
80
60
40
20
0
0
1
2
T j = 175 o C
3
T j = 25 o C
4
100
I S
(A)
5
80
60
40
20
V GS (V)
0
03na81
0
6
Rev. 01 — 18 January 2001
0.2
0.4
BUK9528-55A; BUK9628-55A
T j = 175 o C
0.6
0.8
Fig 14. Gate-source voltage as a function of turn-on
1.0
T j = 25 o C
T
j
= 25 C; I
1.2
gate charge; typical values.
V GS
(V)
1.4
6
5
4
3
2
1
0
V SD (V)
03na82
0
D
1.6
= 25 A
10
TrenchMOS™ logic level FET
V DD = 14 V
© Philips Electronics N.V. 2001. All rights reserved.
20
V DD = 44 V
Q G (nC)
03na83
30
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