IRL2203N International Rectifier, IRL2203N Datasheet - Page 5

• Manufacturer Part Number: IRL2203N
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL2203N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL2203N

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0.01
120
100
0.1
80
60
40
20
0.00001
1
0
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
1
150
175
0.001
V
90%
10%
V
Fig 10b. Switching Time Waveforms
DS
GS
Fig 10a. Switching Time Test Circuit
t
R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D =
2. Peak T = P
Notes:
V
V
GS
GS
t
r
V
J
DS
0.01
µs
DM
x Z
t / t
IRL2203N
1
thJC
D.U.T.
P
2
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
0.1