IRL2203N International Rectifier, IRL2203N Datasheet - Page 6

• Manufacturer Part Number: IRL2203N
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL2203N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL2203N

IRL2203N
Fig 13a. Basic Gate Charge Waveform
6
Fig 12a. Unclamped Inductive Test Circuit
V
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
A S
R G
Q
2 0 V
V
V D S
GS
GS
t p
I A S
Charge
D .U .T
Q
Q
GD
0 .0 1
G
L
t p
1 5V
V
(B R )D SS
D R IV E R
+
- V D D
A
600
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
J
Same Type as D.U.T.
Vs. Drain Current
75
Current Regulator
.2 F
100
50K
3mA
Current Sampling Resistors
.3 F
I
125
G
TOP
BOTTOM
www.irf.com
D.U.T.
150
I
D
°
I D
24A
42A
60A
175
+
-
V
DS