IRL2203N International Rectifier, IRL2203N Datasheet - Page 7

• Manufacturer Part Number: IRL2203N
• Description: MOSFET N-CH 30V 116A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL2203N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL2203N

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
Fig 14. For N-channel
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
HEXFET
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Current Transformer
Low Leakage Inductance
®
power MOSFETs
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
IRL2203N
+
-
V
] ***
DD
7