IRFZ34E International Rectifier, IRFZ34E Datasheet - Page 2

• Manufacturer Part Number: IRFZ34E
• Description: MOSFET N-CH 60V 28A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ34E

Electrical Characteristics @ T
IRFZ34E
Source-Drain Ratings and Characteristics
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
I
I
L
L
SM
on
DSS
d(on)
d(off)
f
S
rr
GSS
r
V
fs
S
(BR)DSS
GS(th)
D
oss
SD
DS(ON)
g
gs
gd
iss
rss
rr
Starting T
Repetitive rating; pulse width limited by
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
G
= 25 , I
/ T
J
J
= 25°C, L = 670µH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
AS
= 17A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
T
Pulse width
I
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.056 –––
–––
–––
–––
2.0
7.6
–––
–––
J
60
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
17 A, di/dt
–––
–––
130
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
680
220
–––
––– 0.042
–––
5.1
4.5
7.5
30
22
30
80
63
200
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
1.3
4.0
6.7
300µs; duty cycle
25
30
95
12
28
200A/µs, V
V/°C
nH
µA
nA
ns
nC
nC
pF
ns
A
V
V
V
S
showing the
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
p-n junction diode.
T
T
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 17A
= 17A
= 25°C, I
= 25°C, I
DD
= 13
= 1.8
= V
= 48V, V
= 0V, I
= 10V, I
= 25V, I
= 60V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 25V
= 0V
= 30V
2%.
GS
V
(BR)DSS
, I
See Fig. 10
D
F
S
D
D
D
Conditions
= 17A
= 250µA
GS
= 17A, V
Conditions
GS
= 250µA
= 17A
= 17A
= 0V, T
= 0V
,
D
GS
= 1mA
J
G
= 0V
= 150°C
G
S
+L
D
S
S
D
D
)