IRFZ34E International Rectifier, IRFZ34E Datasheet - Page 6

• Manufacturer Part Number: IRFZ34E
• Description: MOSFET N-CH 60V 28A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ34E

IRFZ34E
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13a. Basic Gate Charge Waveform
10 V
V
V
I
G
AS
DS
Q
GS
10 V
R
G
V
t
DS
p
Charge
Q
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01
V
(BR)DSS
+
V
-
V
DD
DD
Fig 12c. Maximum Avalanche Energy
200
150
100
12V
Fig 13b. Gate Charge Test Circuit
50
0
V
25
GS
Same Type as D.U.T.
Starting T , Junction Temperature ( C)
Current Regulator
.2 F
50
Vs. Drain Current
50K
3mA
Current Sampling Resistors
J
75
.3 F
I
G
100
D.U.T.
I
D
125
TOP
BOTTOM
+
-
V
150
DS
°
6.9A
I D
12A
17A
175