IRFZ34E International Rectifier, IRFZ34E Datasheet - Page 3

• Manufacturer Part Number: IRFZ34E
• Description: MOSFET N-CH 60V 28A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ34E

1000
100
0.1
100
10
0.1
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
4
Fig 1. Typical Output Characteristics
TOP
BOTTOM
V
DS
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
6
T = 25 C
J
7
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
4.5V
DS
10
8
= 25V
°
T = 175 C
J
9
°
100
10
1000
2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
Fig 2. Typical Output Characteristics
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
TOP
BOTTOM
D
28A
V
DS
T , Junction Temperature( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
IRFZ34E
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
°
GS
=
10V
100