IRF5305S International Rectifier, IRF5305S Datasheet - Page 4

• Manufacturer Part Number: IRF5305S
• Description: MOSFET P-CH 55V 31A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF5305S

IRF5305S/L
1 0 0 0
4
1 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
1 0
5 0 0
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C
C
C
-V
-V
iss
oss
rss
S D
D S
Drain-to-Source Voltage
0.8
V
C
C
C
, S ourc e-to-D rain V oltage (V )
T = 17 5 °C
Forward Voltage
, D rain-to-S ourc e V oltage (V )
G S
iss
rs s
o ss
J
= 0V ,
= C
= C
= C
g s
g d
ds
1.2
+ C
+ C
1 0
T = 2 5°C
g d
g d
J
f = 1 M H z
, C
d s
1.6
S H O R TE D
V
G S
= 0 V
2.0
1 0 0
A
A
1 0 0 0
1 0 0
2 0
1 6
1 2
1 0
8
4
0
1
0
1
Fig 8. Maximum Safe Operating Area
I
Fig 6. Typical Gate Charge Vs.
T
T
S ing le P u lse
D
C
J
= -16 A
= 25 °C
= 17 5°C
O P E R A TIO N IN TH IS A R E A L IM ITE D
1 0
-V
Q , T otal G ate C harge (nC )
Gate-to-Source Voltage
D S
G
, D rain-to-S ourc e V oltage (V )
2 0
B Y R
V
V
3 0
1 0
D S
D S
D S (o n)
= -4 4V
= -2 8V
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
4 0
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5 0
1 0 0 µ s
1 m s
1 0 m s
1 0 0
6 0
A
A