IRF5305S International Rectifier, IRF5305S Datasheet - Page 6

• Manufacturer Part Number: IRF5305S
• Description: MOSFET P-CH 55V 31A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF5305S

IRF5305S/L
-10V
6
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
I
A S
G
R G
-2 0 V
Q
V D S
GS
t p
I A S
D .U .T
t p
0 .0 1
L
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
1 5 V
V D D
A
7 0 0
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
2 5
V
D D
12V
S tarting T , J unc tion T em perature (°C )
V
GS
= -2 5V
5 0
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
7 5
50K
-3mA
Current Sampling Resistors
.3 F
1 0 0
I
G
D.U.T.
1 2 5
TO P
B O TTO M
www.irf.com
I
D
+
1 5 0
-
V
DS
-1 1A
-16 A
-6 .6A
I
D
1 7 5
A