IRF640N International Rectifier, IRF640N Datasheet - Page 12

• Manufacturer Part Number: IRF640N
• Description: MOSFET N-CH 200V 18A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF640N

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/