IRF640N International Rectifier, IRF640N Datasheet - Page 2

• Manufacturer Part Number: IRF640N
• Description: MOSFET N-CH 200V 18A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF640N

Source-Drain Ratings and Characteristics
Thermal Resistance
IRF640N/S/L
Electrical Characteristics @ T
www.irf.com
R
R
R
R
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
L
L
DSS
GSS
S
SM
rr
on
d(on)
r
d(off)
f
fs
D
S
θJC
θCS
θJA
θJA
SD
(BR)DSS
GS(th)
DS(on)
g
gs
gd
iss
oss
rss
rr
(BR)DSS
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)

Parameter
Parameter
Parameter
„
J
= 25°C (unless otherwise specified)
…
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
6.8
–––
–––
–––
–––
–––
–––
„
Intrinsic turn-on time is negligible (turn-on is dominated by L
1160 –––
0.25
–––
––– 0.15
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
185
–––
–––
–––
167
929 1394
5.5
53
10
19
23
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
251
4.0
1.3
18
25
67
11
33
72
V/°C
µA
nA
nC
ns
nH
nC
pF
ns
Ω
V
V
V
S
Typ.
0.50
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 11A
= 11A
= 25°C, I
= 25°C, I
= 9.0Ω, See Fig. 10 ƒ
= 2.5Ω
= 0V, I
= 10V, I
= V
= 50V, I
= 200V, V
= 160V, V
= 20V
= -20V
= 160V
= 10V, See Fig. 6 and 13
= 100V
= 0V
= 25V
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
= 11A, V
= 11A
= 11A
= 250µA
= 11A ƒ
GS
GS
Max.
ƒ
–––
1.0
62
40
= 0V
= 0V, T
D
GS
= 1mA
ƒ
J
= 0V
G
= 150°C
G
Units
S
°C/W
ƒ
+L
D
D
S
)
S
D
2