IRF640N International Rectifier, IRF640N Datasheet - Page 7

• Manufacturer Part Number: IRF640N
• Description: MOSFET N-CH 200V 18A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF640N

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
Power MOSFETs
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
IRF640N/S/L
+
-
7