IRLZ24NS International Rectifier, IRLZ24NS Datasheet - Page 2

• Manufacturer Part Number: IRLZ24NS
• Description: MOSFET N-CH 55V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ24NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLZ24NS

IRLZ24NS/L
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
DSS
L
Notes:
GSS
d(on)
d(off)
f
I
I
V
t
Q
t
r
S
on
V
fs
S
SM
rr
(BR)DSS
DS(on)
GS(th)
g
iss
oss
gs
gd
rss
For recommended footprint and soldering techniques refer to application note #AN-994.
SD
(BR)DSS
rr
max. junction temperature. ( See fig. 11 )
V
Repetitive rating; pulse width limited by
R
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 11A. (See Figure 12)
J
= 25°C, L = 790µH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
–––
Min. Typ. Max. Units
––– 0.061 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
8.3
55
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Pulse width
I
T
Uses IRLZ24N data and test conditions
SD
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
175°C
–––
–––
––– 0.060
––– 0.075
––– 0.105
–––
–––
–––
–––
––– -100
–––
–––
–––
7.5
480
130
7.1
–––
–––
–––
11A, di/dt
74
20
29
61
130
60
100
–––
–––
–––
–––
–––
–––
–––
250
–––
–––
–––
2.0
3.7
8.5
200
25
15
1.3
72
18
90
300µs; duty cycle
290A/µs, V
V/°C
µA
nA
nC
ns
nH
pF
V
V
S
nC
A
ns
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
I
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
integral reverse
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 11A
= 11A
= 25°C, I
= 2.4
= 25°C, I
= 12
DD
= V
= 25V, I
= 44V, V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 55V, V
= 44V
= 5.0V, See Fig. 6 and 13
= 0V
= 25V
= 16V
= -16V
= 28V
GS
V
2%.
(BR)DSS
, I
V
D
See Fig. 10
F
GS
S
D
D
D
D
D
= 250µA
GS
GS
= 11A
= 11A, V
Conditions
Conditions
= 250µA
= 11A
= 11A
= 11A
= 9.0A
= 5.0V
= 0V, T
= 0V
,
D
= 1mA
GS
J
= 150°C
= 0V
G
S
+L
D
D
S
)