IRLZ24NS International Rectifier, IRLZ24NS Datasheet - Page 5

• Manufacturer Part Number: IRLZ24NS
• Description: MOSFET N-CH 55V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ24NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLZ24NS

0 . 0 1
0.1
2 0
1 6
1 2
1 0
0 . 0 0 0 0 1
8
4
0
1
2 5
Fig 9. Maximum Drain Current Vs.
D = 0 .50
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .01
5 0
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
(TH ER M AL R ES PO N SE )
T , C ase T em perature (°C )
Case Temperature
C
SIN G LE P U LSE
7 5
0 . 0 0 0 1
1 0 0
1 2 5
t , R ectan gu lar P ulse D u ratio n (se c)
1
1 5 0
0 . 0 0 1
1 7 5
A
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
0 . 0 1
t
d(on)
R
Pulse Width
Duty Factor
N o te s :
1 . D u ty fa c to r D = t
2 . P e a k T = P
G
5.0V
V
GS
t
r
V
IRLZ24NS/L
J
DS
µs
D M
x Z
0.1
1
/ t
th J C
D.U.T.
2
P
D M
t
d(off)
+ T
R
D
C
t
1
t
t 2
f
V
+
-
DD
1
A