IRFR18N15D International Rectifier, IRFR18N15D Datasheet - Page 4

• Manufacturer Part Number: IRFR18N15D
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR18N15D

IRFR18N15D/IRFU18N15D
4
10000
1000
100
0.1
100
10
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
J
V
SD
V DS , Drain-to-Source Voltage (V)
Forward Voltage
0.5
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Coss
Ciss
Crss
0.8
T = 25 C
J
f = 1 MHZ
100
°
1.1
V
GS
SHORTED
= 0 V
1000
1.4
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
10
BY R
20
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 120V
= 75V
= 30V
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100
30
10us
100us
1ms
10ms
13
1000
40