IRFR18N15D International Rectifier, IRFR18N15D Datasheet - Page 6

• Manufacturer Part Number: IRFR18N15D
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR18N15D

IRFR18N15D/IRFU18N15D
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I A S
.3 F
D .U .T
0 .0 1
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
J
75
100
125
TOP
BOTTOM
www.irf.com
150
°
4.4A
9.0A
I D
11A
175