IRFR18N15D International Rectifier, IRFR18N15D Datasheet - Page 5

• Manufacturer Part Number: IRFR18N15D
• Description: MOSFET N-CH 150V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR18N15D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR18N15D

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0.01
0.1
20
16
12
10
0.00001
8
4
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
IRFR18N15D/IRFU18N15D
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D =
2. Peak T = P
G
Notes:
V
V
GS
GS
t
r
V
J
DS
0.01
µs
DM
x Z
t / t
1
thJC
D.U.T.
P
2
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
0.1