IRF7701 International Rectifier, IRF7701 Datasheet - Page 2

• Manufacturer Part Number: IRF7701
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5050pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
IRF7701
Electrical Characteristics @ T
Notes:
I
I
I
V
t
Q
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
I
SM
S
rr
d(on)
r
d(off)
f
GSS
V
fs
SD
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
––– -0.006 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 5050 –––
––– 1520 –––
––– 1120 –––
–––
–––
-12
21
–––
–––
––– 0.011
––– 0.015
––– 0.022
–––
–––
–––
–––
240
–––
–––
––– -100
220
9.1
52
53
69
21
19
20
-1.2
–––
-1.2
–––
100
100
–––
–––
–––
–––
1.0
-25
-1.5
-80
78
80
14
32
V/°C Reference to 25°C, I
nC
nC
nA
ns
pF
ns
µA
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
D
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= -12V, V
= -9.6V, V
= -9.6V
= -6.0V
= 0V
= -8.0V
= 8.0V
= -4.5V
= -4.5V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.5A
= -1.5A, V
D
D
D
GS
= -250µA
GS
= -10A
= -10A
= -8.5A
= -7.0A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
D
S